Evolution of TID Effects with the Scaling Down of Microelectronic CMOS Technologies

by Stefano Bonaldo (Presenter)
University of Padova, Italy

Abstract – Ionizing radiation may affect the reliability of the electronic systems, inducing a variation of their nominal electrical characteristics and degrading their performance. The study of radiation effects in microelectronic devices is essential in space, avionic, and ground level applications affected by artificial and/or natural radiation environments. This talk is focused on the exploration of total ionizing dose (TID) degradation mechanisms affecting modern CMOS nanometer-scale FETs. The TID mechanisms are dissected through the evaluation of measurable effects affecting the electrical response of transistors and on the identification of the microscopical nature of the radiation-induced defects. Within such studies, technologies dedicated to high-energy-physics experiments have been tested at ultra-high doses. Different approaches, as charge pumping, low frequency noise measurements and technology computer-aided design simulations are used to identify the location, density and energy levels of the defects, whose investigation is essential for proposing solutions to improve their TID tolerance. Most recent findings highlight the strong influence of scaling down to TID-induced phenomena in deeply scaled microelectronic transistors. The constant evolution of fabrication processes in the semiconductor industry leads to an unpredictable trend in TID effects, requiring continuous efforts for testing and qualification of electronics, thus keeping an increasingly higher interest within the scientific community for research aimed at increasing the knowledge of radiation effects on electronic devices.

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